Surface acoustic wave propagation in semiconductor systems is strongly influenced by coupled thermal, electromagnetic, and mechanical interactions, particularly under high-frequency operating conditions encountered in advanced microelectronic and sensing devices. Existing thermoelastic wave models generally neglect the simultaneous interaction of Hall current effects, rotational dynamics, temperature-dependent material behavior, and non-Fourier thermal relaxation, which limits their capability for accurately characterizing multiphysics wave phenomena in semiconductor media. This study investigates Rayleigh surface wave propagation in a rotating magneto-thermoelastic silicon semiconductor half-space by developing a unified multiphysics framework incorporating Hall current effects and a multi-dual-phase-lag heat conduction model with temperature-dependent material properties. The coupled governing equations were transformed into dimensionless form and analytically solved using normal-mode analysis to derive the secular equation governing Rayleigh-type surface waves. Numerical simulations were performed using experimentally validated silicon parameters to evaluate the phase velocity, attenuation coefficient, penetration depth, and specific heat loss under different thermal, electromagnetic, and rotational conditions. A variance-based global sensitivity analysis based on Sobol indices was additionally conducted to quantify the relative influence of the governing multiphysical parameters on wave behavior. The results showed that rotational effects increased phase velocity and penetration depth, whereas temperature-dependent thermal softening reduced wave propagation capability and enhanced attenuation. Hall current effects and magnetic field intensity exhibited competing influences on wave kinematics and damping characteristics. The sensitivity analysis revealed that electromagnetic parameters primarily governed wave kinematics, while the thermal softening parameter dominated thermodynamic energy dissipation behavior. Nearly uniform sensitivity distributions were observed for phase velocity and penetration depth, indicating strong multiphysical coupling among thermal, elastic, and electromagnetic fields within the semiconductor system. The results indicate that the proposed framework provides a physically consistent and quantitatively interpretable platform for analyzing coupled wave propagation phenomena in semiconductor engineering systems. The developed model offers practical guidance for the design and optimization of surface acoustic wave devices, semiconductor sensors, and thermo-electromagnetic microelectronic systems operating under complex coupled-field environments.
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